MPS8050 MPS8050 npn general purpose amplifier this device is designed for general purpose audio amplifier applications at collector currents to 500 ma. sourced from process 30. absolute maximum ratings* ta = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. thermal characteristics ta = 25c unless otherwise noted symbol characteristic max units MPS8050 p d total device dissipation derate above 25 c 625 5.0 mw mw/ c r q jc thermal resistanc e, j unction to case 83.3 c/w r q ja thermal resistanc e, j unction to ambient 200 c/w symbol parameter value units v ceo collector-emitter voltage 25 v v cbo collector-bas e voltage 40 v v ebo emitter-base voltage 6.0 v i c collector current - continuous 1.0 a t j , t stg operating and storage j unction temperature range -55 to +150 c c b e to-92 discrete power & signal technologies ? 1997 fairchild semiconductor corporation
MPS8050 electrical characteristics ta = 25c unless otherwise noted off characteristics symbol parameter test conditions min max units on characteristics v (br)ceo collector-emitter sustaining voltage* i c = 30 ma, i b = 025v v (br)cbo collector-bas e breakdown voltage i c = 100 m a, i e = 0 40 v v (br) ebo emitter-base breakdown voltage i e = 100 m a, i c = 0 6.0 v i cbo collector-cutoff current v cb = 35 v, i e = 0 0.1 m a i ces collector-cutoff current v ce = 20 v, i e = 0 75 na h fe dc current gain i c = 5.0 ma, v ce = 1.0 i c = 100 ma, v ce = 1.0 i c = 800 ma, v ce = 1.0 45 80 40 300 v ce( sat ) collector-emitter saturation voltage i c = 800 ma, i b = 80 ma 0.5 v v be( sat ) base-emitter saturation voltage i c = 800 ma, i b = 80 ma 1.2 v * pulse test: pulse width 300 m s, duty cycle 1.0% typical characteristics base-emitter saturation voltage vs collector current 10 100 1000 0.4 0.6 0.8 1 1.2 i - collector current (ma) v - base emitter voltage (v) c besat b b = 10 - 40 oc 25 c 125 c npn general purpose amplifier (continued) typical pulsed current gain vs collector current p30 1 10 100 1000 50 100 150 200 250 300 i - collector current (a) h - typical pulsed current gain fe - 40 oc 25 c c v = 1v ce 125 c collector-emitter saturation voltage vs collector current p30 10 100 1000 0 0.1 0.2 0.3 0.4 i - collector current (ma) v - collector emitter voltage (v) c cesat b b = 10 - 40 oc 25 c 125 c base emitter on voltage vs collector current p30 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 i - collector current (ma) v - base emitter on voltage (v) c beon v = 1v ce - 40 oc 25 c 125 c
MPS8050 typical characteristics (continued) npn general purpose amplifier (continued) collector-cutoff current vs. ambient temperature 25 50 75 100 125 0.001 0.01 0.1 1 10 t - ambient temperature ( c) i - collector current (na) a cbo o v = 40v cb collector saturation region p30 20 00 40 00 60 00 80 00 20 00 0 40 00 0 0 0.5 1 1.5 2 i - base current (ua) v - collector-emitter voltage (v) ce b 100ma 800ma 5 ma ta = 25 c ic = input and output capacitance vs reverse voltage 0.1 1 10 100 0.1 1 10 100 v - collector voltage(v) capacitance (pf) cib cob f = 1.0 mhz ce gain bandwidth product vs collector current 1 10 20 50 100 0 200 400 600 800 1000 i - collector current (ma) f - gain bandwidth product (mhz) c t v = 10v ce collector-emitter breakdown voltage with resistance between emitter-base 0.1 1 10 100 1000 32 33 34 35 36 37 38 resistance (k ) bv - breakdown voltage (v) w w cer power dissipation vs ambient temperature 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 temperature ( c) p - power dissipation ( mw) d o to-92
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